? 2002 ixys all rights reserved hiperfet tm power mosfets n-channel enhancement mode high dv/dt, low t rr , hdmos tm family symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 14n80 14 a 15n80 15 a i dm t c = 25 c, pulse width limited by t jm 14n80 56 a 15n80 60 a i ar t c = 25 c 14n80 14 a 15n80 15 a e ar t c = 25 c30mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1. 13/10 nm/lb.in. weight 6g features ? international standard packages ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance - easy to drive and to protect ? fast intrinsic rectifier applications ? dc-dc converters ? synchronous rectification ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? ac motor control ? temperature and lighting controls ? low voltage relays advantages ? easy to mount with 1 screw (isolated mounting screw hole) ? space savings ? high power density to-247 ad g = gate d = drain s = source tab = drain (tab) ds96523d(12/02) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 800 v v dss temperature coefficient 0.096 %/k v gs(th) v ds = v gs , i d = 4 ma 2.5 4.5 v v gs(th) temperature coefficient -0.214 %/k i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 14n80 0.70 ? 15n80 0.60 ? pulse test, t 300 s, duty cycle d 2 % v dss i d25 r ds(on) 800 v 14 a 0.70 ? ? ? ? ? 800 v 15 a 0.60 ? ? ? ? ? t rr 250 ns ixfh14n80 IXFH15N80
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixfh 14n80 ixfh 15n80 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 8 14 s c iss 3965 4870 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 315 395 pf c rss 73 120 pf t d(on) 20 50 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 33 50 ns t d(off) r g = 2 ? (external) 63 100 ns t f 32 50 ns q g(on) 150 200 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 23 45 nc q gd 64 68 nc r thjc 0.42 k/w r thck 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 14n80 14 a 15n80 15 a i sm repetitive; 14n80 56 a 15n80 60 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr t j = 25 c 250 ns t j = 125 c 400 ns q rm 1 c i rm 8.5 a i f = i s -di/dt = 100 a/ s, v r = 100 v dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3
? 2002 ixys all rights reserved ixfh 14n80 ixfh 15n80 v gs - volts 234567 i d - amperes 0 2 4 6 8 10 12 14 16 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 4 8 12 16 20 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 i d = 7.5a i d - amperes 0 5 10 15 20 25 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v ds - volts 0 4 8 12 16 20 i d - amperes 0 4 8 12 16 20 v ds - volts 0246810 i d - amperes 0 4 8 12 16 20 4v v gs = 10v v gs = 9v 8v 7v 6v t j = 125 o c v gs = 10v t j = 25 o c 5v 5v 4v t j = 25 o c i d = 15a t j = 25 o c ixfh14n80 IXFH15N80 t j = 125 o c v gs = 9v 8v 7v 6v t j = 125 o c figure 3. r ds(on) normalized to 0.5 i d25 value vs. i d figure 5. drain current vs. case temperature figure 6. admittance curves figure 1. output characteristics at 25 o c figure 2. output characteristics at 125 o c figure 4. r ds(on) normalized to 0.5 i d25 value vs. t j
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 z thjc - (k/w) 0.001 0.01 0.1 1 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 50 100 250 500 1000 2500 5000 v sd - volts 0.20.40.60.81.01.21.4 i d - amperes 0 10 20 30 40 50 gate charge - nc 0 50 100 150 200 250 v gs - volts 0 2 4 6 8 10 12 crss coss ciss t j = 25 o c v ds = 400v i d = 14a i g = 1ma f = 1mhz t j = 125 o c d=0.5 d=0.1 d=0.05 d=0.02 d=0.01 single pulse d = duty cycle d=0.2 ixfh 14n80 ixfh 15n80 figure 8. capacitance curves figure 7. gate charge figure 9. source current vs. source to drain voltage figure 11. transient thermal resistance
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